Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy

We present a systematic study of surface band bending in Ga-polar n-GaN with different Si doping concentrations by angular dependent X-ray photoelectron spectroscopy (ADXPS). The binding energies of Ga 3d and N 1 s core levels in n-GaN films increase with increasing the emission angle, i. e., the pr...

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Detalles Bibliográficos
Autores principales: Zhao, Yanfei, Gao, Hongwei, Huang, Rong, Huang, Zengli, Li, Fangsen, Feng, Jiagui, Sun, Qian, Dingsun, An, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6861320/
https://www.ncbi.nlm.nih.gov/pubmed/31740691
http://dx.doi.org/10.1038/s41598-019-53236-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6861320/
https://www.ncbi.nlm.nih.gov/pubmed/31740691
http://dx.doi.org/10.1038/s41598-019-53236-9

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