Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °C, 1175 °C, and 1825 °C. Unde...

Descripción completa

Detalles Bibliográficos
Autores principales: Spera, Monia, Greco, Giuseppe, Corso, Domenico, Di Franco, Salvatore, Severino, Andrea, Messina, Angelo Alberto, Giannazzo, Filippo, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6861978/
https://www.ncbi.nlm.nih.gov/pubmed/31652698
http://dx.doi.org/10.3390/ma12213468

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6861978/
https://www.ncbi.nlm.nih.gov/pubmed/31652698
http://dx.doi.org/10.3390/ma12213468

Ejemplares similares