Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn(2)O(3−x)N/Cu Integration

In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn(2)O(3−x)N film, add...

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Detalles Bibliográficos
Autores principales: Cheng, Yi-Lung, Lin, Yu-Lu, Lee, Chih-Yen, Chen, Giin-Shan, Fang, Jau-Shiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864526/
https://www.ncbi.nlm.nih.gov/pubmed/31661909
http://dx.doi.org/10.3390/molecules24213882

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864526/
https://www.ncbi.nlm.nih.gov/pubmed/31661909
http://dx.doi.org/10.3390/molecules24213882

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