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Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn(2)O(3−x)N/Cu Integration
In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn(2)O(3−x)N film, add...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864526/ https://www.ncbi.nlm.nih.gov/pubmed/31661909 http://dx.doi.org/10.3390/molecules24213882 |