Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy...

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Detalles Bibliográficos
Autores principales: Glass, Daniel, Cortés, Emiliano, Ben‐Jaber, Sultan, Brick, Thomas, Peveler, William J., Blackman, Christopher S., Howle, Christopher R., Quesada‐Cabrera, Raul, Parkin, Ivan P., Maier, Stefan A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
http://dx.doi.org/10.1002/advs.201970132

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
http://dx.doi.org/10.1002/advs.201970132

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