Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy...

Descripción completa

Detalles Bibliográficos
Autores principales: Glass, Daniel, Cortés, Emiliano, Ben‐Jaber, Sultan, Brick, Thomas, Peveler, William J., Blackman, Christopher S., Howle, Christopher R., Quesada‐Cabrera, Raul, Parkin, Ivan P., Maier, Stefan A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
http://dx.doi.org/10.1002/advs.201970132
Descripción
Sumario:Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo‐induced vacancies under ambient conditions on metal oxide semiconductors. [Image: see text]

Ejemplares similares