Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)

Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy...

Descripción completa

Detalles Bibliográficos
Autores principales: Glass, Daniel, Cortés, Emiliano, Ben‐Jaber, Sultan, Brick, Thomas, Peveler, William J., Blackman, Christopher S., Howle, Christopher R., Quesada‐Cabrera, Raul, Parkin, Ivan P., Maier, Stefan A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
http://dx.doi.org/10.1002/advs.201970132
_version_ 1783472004725211136
author Glass, Daniel
Cortés, Emiliano
Ben‐Jaber, Sultan
Brick, Thomas
Peveler, William J.
Blackman, Christopher S.
Howle, Christopher R.
Quesada‐Cabrera, Raul
Parkin, Ivan P.
Maier, Stefan A.
author_facet Glass, Daniel
Cortés, Emiliano
Ben‐Jaber, Sultan
Brick, Thomas
Peveler, William J.
Blackman, Christopher S.
Howle, Christopher R.
Quesada‐Cabrera, Raul
Parkin, Ivan P.
Maier, Stefan A.
author_sort Glass, Daniel
collection PubMed
description Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo‐induced vacancies under ambient conditions on metal oxide semiconductors. [Image: see text]
format Online
Article
Text
id pubmed-6864991
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-68649912019-11-22 Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019) Glass, Daniel Cortés, Emiliano Ben‐Jaber, Sultan Brick, Thomas Peveler, William J. Blackman, Christopher S. Howle, Christopher R. Quesada‐Cabrera, Raul Parkin, Ivan P. Maier, Stefan A. Adv Sci (Weinh) Inside Front Cover Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number https://doi.org/10.1002/advs.201901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo‐induced vacancies under ambient conditions on metal oxide semiconductors. [Image: see text] John Wiley and Sons Inc. 2019-11-20 /pmc/articles/PMC6864991/ http://dx.doi.org/10.1002/advs.201970132 Text en © 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Inside Front Cover
Glass, Daniel
Cortés, Emiliano
Ben‐Jaber, Sultan
Brick, Thomas
Peveler, William J.
Blackman, Christopher S.
Howle, Christopher R.
Quesada‐Cabrera, Raul
Parkin, Ivan P.
Maier, Stefan A.
Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title_full Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title_fullStr Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title_full_unstemmed Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title_short Surface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
title_sort surface oxygen vacancies: dynamics of photo‐induced surface oxygen vacancies in metal‐oxide semiconductors studied under ambient conditions (adv. sci. 22/2019)
topic Inside Front Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6864991/
http://dx.doi.org/10.1002/advs.201970132
work_keys_str_mv AT glassdaniel surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT cortesemiliano surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT benjabersultan surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT brickthomas surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT pevelerwilliamj surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT blackmanchristophers surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT howlechristopherr surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT quesadacabreraraul surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT parkinivanp surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019
AT maierstefana surfaceoxygenvacanciesdynamicsofphotoinducedsurfaceoxygenvacanciesinmetaloxidesemiconductorsstudiedunderambientconditionsadvsci222019

Ejemplares similares