Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region and improv...

Descripción completa

Detalles Bibliográficos
Autores principales: Hu, Jiahui, Zhang, Jun, Zhang, Yi, Zhang, Huixue, Long, Hanling, Chen, Qian, Shan, Maocheng, Du, Shida, Dai, Jiangnan, Chen, Changqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6872697/
https://www.ncbi.nlm.nih.gov/pubmed/31754922
http://dx.doi.org/10.1186/s11671-019-3201-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6872697/
https://www.ncbi.nlm.nih.gov/pubmed/31754922
http://dx.doi.org/10.1186/s11671-019-3201-x

Ejemplares similares