The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface

Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointer...

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Detalles Bibliográficos
Autores principales: Podlipskas, Žydrūnas, Jurkevičius, Jonas, Kadys, Arūnas, Miasojedovas, Saulius, Malinauskas, Tadas, Aleksiejūnas, Ramūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6874540/
https://www.ncbi.nlm.nih.gov/pubmed/31757996
http://dx.doi.org/10.1038/s41598-019-53732-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6874540/
https://www.ncbi.nlm.nih.gov/pubmed/31757996
http://dx.doi.org/10.1038/s41598-019-53732-y

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