Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in ε-ph...

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Detalles Bibliográficos
Autores principales: Diep, Nhu Quynh, Liu, Cheng-Wei, Wu, Ssu-Kuan, Chou, Wu-Ching, Huynh, Sa Hoang, Chang, Edward Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6883029/
https://www.ncbi.nlm.nih.gov/pubmed/31780756
http://dx.doi.org/10.1038/s41598-019-54406-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6883029/
https://www.ncbi.nlm.nih.gov/pubmed/31780756
http://dx.doi.org/10.1038/s41598-019-54406-5

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