Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD

We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping...

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Detalles Bibliográficos
Autores principales: Chrostowski, Marta, Alvarez, José, Le Donne, Alessia, Binetti, Simona, Roca i Cabarrocas, Pere
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6887746/
https://www.ncbi.nlm.nih.gov/pubmed/31752297
http://dx.doi.org/10.3390/ma12223795

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6887746/
https://www.ncbi.nlm.nih.gov/pubmed/31752297
http://dx.doi.org/10.3390/ma12223795

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