Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model. The application of both nu...

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Detalles Bibliográficos
Autores principales: Rodriguez, N., Maldonado, D., Romero, F. J., Alonso, F. J., Aguilera, A. M., Godoy, A., Jimenez-Molinos, F., Ruiz, F. G., Roldan, J. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6888125/
https://www.ncbi.nlm.nih.gov/pubmed/31766105
http://dx.doi.org/10.3390/ma12223734

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6888125/
https://www.ncbi.nlm.nih.gov/pubmed/31766105
http://dx.doi.org/10.3390/ma12223734

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