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Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6888395/ https://www.ncbi.nlm.nih.gov/pubmed/31717905 http://dx.doi.org/10.3390/ma12223713 |