Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Amorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-polarity-dependent programming behaviors of an a-IGZO TFT memory w...

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Detalles Bibliográficos
Autores principales: Liu, Dan-Dan, Liu, Wen-Jun, Pei, Jun-Xiang, Xie, Lin-Yan, Huo, Jingyong, Wu, Xiaohan, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889102/
https://www.ncbi.nlm.nih.gov/pubmed/31792629
http://dx.doi.org/10.1186/s11671-019-3204-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889102/
https://www.ncbi.nlm.nih.gov/pubmed/31792629
http://dx.doi.org/10.1186/s11671-019-3204-7

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