Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

An ultra-low specific on-resistance (R(on,sp)) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper. On-resistance analytical model for the proposed LDMOS is built to provide an in-depth ins...

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Detalles Bibliográficos
Autores principales: Wang, Zhuo, Yuan, Zhangyi’an, Zhou, Xin, Qiao, Ming, Li, Zhaoji, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6890875/
https://www.ncbi.nlm.nih.gov/pubmed/30689063
http://dx.doi.org/10.1186/s11671-019-2866-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6890875/
https://www.ncbi.nlm.nih.gov/pubmed/30689063
http://dx.doi.org/10.1186/s11671-019-2866-5

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