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Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer
An ultra-low specific on-resistance (R(on,sp)) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper. On-resistance analytical model for the proposed LDMOS is built to provide an in-depth ins...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6890875/ https://www.ncbi.nlm.nih.gov/pubmed/30689063 http://dx.doi.org/10.1186/s11671-019-2866-5 |