Probing the edge-related properties of atomically thin MoS(2) at nanoscale

Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spec...

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Detalles Bibliográficos
Autores principales: Huang, Teng-Xiang, Cong, Xin, Wu, Si-Si, Lin, Kai-Qiang, Yao, Xu, He, Yu-Han, Wu, Jiang-Bin, Bao, Yi-Fan, Huang, Sheng-Chao, Wang, Xiang, Tan, Ping-Heng, Ren, Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895227/
https://www.ncbi.nlm.nih.gov/pubmed/31804496
http://dx.doi.org/10.1038/s41467-019-13486-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895227/
https://www.ncbi.nlm.nih.gov/pubmed/31804496
http://dx.doi.org/10.1038/s41467-019-13486-7

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