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Probing the edge-related properties of atomically thin MoS(2) at nanoscale
Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spec...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895227/ https://www.ncbi.nlm.nih.gov/pubmed/31804496 http://dx.doi.org/10.1038/s41467-019-13486-7 |
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author | Huang, Teng-Xiang Cong, Xin Wu, Si-Si Lin, Kai-Qiang Yao, Xu He, Yu-Han Wu, Jiang-Bin Bao, Yi-Fan Huang, Sheng-Chao Wang, Xiang Tan, Ping-Heng Ren, Bin |
author_facet | Huang, Teng-Xiang Cong, Xin Wu, Si-Si Lin, Kai-Qiang Yao, Xu He, Yu-Han Wu, Jiang-Bin Bao, Yi-Fan Huang, Sheng-Chao Wang, Xiang Tan, Ping-Heng Ren, Bin |
author_sort | Huang, Teng-Xiang |
collection | PubMed |
description | Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS(2), which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm(−1)) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm(−1). The power of TERS demonstrated in MoS(2) can also be extended to other 2D materials, which may guide the defect engineering for desired properties. |
format | Online Article Text |
id | pubmed-6895227 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-68952272019-12-09 Probing the edge-related properties of atomically thin MoS(2) at nanoscale Huang, Teng-Xiang Cong, Xin Wu, Si-Si Lin, Kai-Qiang Yao, Xu He, Yu-Han Wu, Jiang-Bin Bao, Yi-Fan Huang, Sheng-Chao Wang, Xiang Tan, Ping-Heng Ren, Bin Nat Commun Article Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS(2), which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm(−1)) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm(−1). The power of TERS demonstrated in MoS(2) can also be extended to other 2D materials, which may guide the defect engineering for desired properties. Nature Publishing Group UK 2019-12-05 /pmc/articles/PMC6895227/ /pubmed/31804496 http://dx.doi.org/10.1038/s41467-019-13486-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Huang, Teng-Xiang Cong, Xin Wu, Si-Si Lin, Kai-Qiang Yao, Xu He, Yu-Han Wu, Jiang-Bin Bao, Yi-Fan Huang, Sheng-Chao Wang, Xiang Tan, Ping-Heng Ren, Bin Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title | Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title_full | Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title_fullStr | Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title_full_unstemmed | Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title_short | Probing the edge-related properties of atomically thin MoS(2) at nanoscale |
title_sort | probing the edge-related properties of atomically thin mos(2) at nanoscale |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895227/ https://www.ncbi.nlm.nih.gov/pubmed/31804496 http://dx.doi.org/10.1038/s41467-019-13486-7 |
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