Composition dependent structural phase transition and optical band gap tuning in InSe thin films

Bulk alloys of In(x)Se(100-x) (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited In(x)Se(100-x) thin films with x ≤ 40 ar...

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Detalles Bibliográficos
Autores principales: Singh, Harpreet, Singh, Palwinder, Singh, Randhir, Sharma, Jeewan, Singh, A.P., Kumar, Akshay, Thakur, Anup
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895580/
https://www.ncbi.nlm.nih.gov/pubmed/31844773
http://dx.doi.org/10.1016/j.heliyon.2019.e02933

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895580/
https://www.ncbi.nlm.nih.gov/pubmed/31844773
http://dx.doi.org/10.1016/j.heliyon.2019.e02933

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