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Terahertz detection with an antenna-coupled highly-doped silicon quantum dot

Nanostructured dopant-based silicon (Si) transistors are promising candidates for high-performance photodetectors and quantum information devices. For highly doped Si with donor bands, the energy depth of donor levels and the energy required for tunneling processes between donor levels are typically...

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Detalles Bibliográficos
Autores principales: Okamoto, Takuya, Fujimura, Naoki, Crespi, Luca, Kodera, Tetsuo, Kawano, Yukio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6901460/
https://www.ncbi.nlm.nih.gov/pubmed/31819074
http://dx.doi.org/10.1038/s41598-019-54130-0