Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

In this study, multicolor photodetectors (PDs) fabricated by using bulk p-i-n-based visible GaAs and near-infrared InGaAs structures were monolithically integrated through a high-throughput epitaxial lift-off (ELO) process. To perform multicolor detection in integrated structures, GaAs PDs were tran...

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Detalles Bibliográficos
Autores principales: Geum, Dae-Myeong, Kim, SangHyeon, Kim, Seong Kwang, Kang, SooSeok, Kyhm, JiHoon, Song, Jindong, Choi, Won Jun, Yoon, Euijoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6901491/
https://www.ncbi.nlm.nih.gov/pubmed/31819126
http://dx.doi.org/10.1038/s41598-019-55159-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6901491/
https://www.ncbi.nlm.nih.gov/pubmed/31819126
http://dx.doi.org/10.1038/s41598-019-55159-x

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