Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V(Si)), silicon and carbon divacancies (V(C)V(Si)), and nitrogen vacancies (N(C)V(Si)) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a dia...

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Detalles Bibliográficos
Autores principales: Castelletto, Stefania, Al Atem, Abdul Salam, Inam, Faraz Ahmed, von Bardeleben, Hans Jürgen, Hameau, Sophie, Almutairi, Ahmed Fahad, Guillot, Gérard, Sato, Shin-ichiro, Boretti, Alberto, Bluet, Jean Marie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2019
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6902882/
https://www.ncbi.nlm.nih.gov/pubmed/31886115
http://dx.doi.org/10.3762/bjnano.10.229

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6902882/
https://www.ncbi.nlm.nih.gov/pubmed/31886115
http://dx.doi.org/10.3762/bjnano.10.229

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