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Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V(Si)), silicon and carbon divacancies (V(C)V(Si)), and nitrogen vacancies (N(C)V(Si)) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a dia...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6902882/ https://www.ncbi.nlm.nih.gov/pubmed/31886115 http://dx.doi.org/10.3762/bjnano.10.229 |