Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells

We report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of [Formula: see text] -plane GaN/AlGaN multi-quantum well systems. The presence of carrier localization effects in this system was demonstrated...

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Detalles Bibliográficos
Autores principales: Roble, A. A., Patra, S. K., Massabuau, F., Frentrup, M., Leontiadou, M. A., Dawson, P., Kappers, M. J., Oliver, R. A., Graham, D. M., Schulz, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906529/
https://www.ncbi.nlm.nih.gov/pubmed/31827118
http://dx.doi.org/10.1038/s41598-019-53693-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906529/
https://www.ncbi.nlm.nih.gov/pubmed/31827118
http://dx.doi.org/10.1038/s41598-019-53693-2

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