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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
We report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of [Formula: see text] -plane GaN/AlGaN multi-quantum well systems. The presence of carrier localization effects in this system was demonstrated...
Autores principales: | Roble, A. A., Patra, S. K., Massabuau, F., Frentrup, M., Leontiadou, M. A., Dawson, P., Kappers, M. J., Oliver, R. A., Graham, D. M., Schulz, S. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906529/ https://www.ncbi.nlm.nih.gov/pubmed/31827118 http://dx.doi.org/10.1038/s41598-019-53693-2 |
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