Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels

[Image: see text] Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and log...

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Detalles Bibliográficos
Autores principales: Neuper, Felix, Chandresh, Abhinav, Singaraju, Surya Abhishek, Aghassi-Hagmann, Jasmin, Hahn, Horst, Breitung, Ben
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906765/
https://www.ncbi.nlm.nih.gov/pubmed/31858043
http://dx.doi.org/10.1021/acsomega.9b02513

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906765/
https://www.ncbi.nlm.nih.gov/pubmed/31858043
http://dx.doi.org/10.1021/acsomega.9b02513

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