Data for functional TiO(2) embedded Silicon photodetectors under varying illumination and bias conditions

In this data in brief (DIB) article, major photodetector (PD) characteristics of anisotype (Ag/n-TiO(2)/p-Si/Al), isotype (Ag/n-TiO(2)/n-Si/Ag) and M-S-M type (Ag/p-Si/Al) structures under reverse bias conditions (−1 to −5 V) over a broad spectral region (300–800 nm) have been presented. Critical fi...

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Detalles Bibliográficos
Autores principales: Chauhan, Khushbu R., Patel, Dipal B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Materials Science
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6909202/
https://www.ncbi.nlm.nih.gov/pubmed/31871996
http://dx.doi.org/10.1016/j.dib.2019.104856

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6909202/
https://www.ncbi.nlm.nih.gov/pubmed/31871996
http://dx.doi.org/10.1016/j.dib.2019.104856

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