High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

[Image: see text] Broadband transparent conductive oxide layers with high electron mobility (μ(e)) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In(2)O(3) thin films with high μ(e) (>60 cm(2) V(–1) s(–1)) have been extensively...

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Detalles Bibliográficos
Autores principales: Han, Can, Mazzarella, Luana, Zhao, Yifeng, Yang, Guangtao, Procel, Paul, Tijssen, Martijn, Montes, Ana, Spitaleri, Luca, Gulino, Antonino, Zhang, Xiaodan, Isabella, Olindo, Zeman, Miro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6909235/
https://www.ncbi.nlm.nih.gov/pubmed/31756085
http://dx.doi.org/10.1021/acsami.9b14709

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6909235/
https://www.ncbi.nlm.nih.gov/pubmed/31756085
http://dx.doi.org/10.1021/acsami.9b14709

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