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High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells
[Image: see text] Broadband transparent conductive oxide layers with high electron mobility (μ(e)) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In(2)O(3) thin films with high μ(e) (>60 cm(2) V(–1) s(–1)) have been extensively...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6909235/ https://www.ncbi.nlm.nih.gov/pubmed/31756085 http://dx.doi.org/10.1021/acsami.9b14709 |