Engineering of self-rectifying filamentary resistive switching in LiNbO(3) single crystalline thin film via strain doping

The abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications o...

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Detalles Bibliográficos
Autores principales: You, Tiangui, Huang, Kai, Zhao, Xiaomeng, Yi, Ailun, Chen, Chen, Ren, Wei, Jin, Tingting, Lin, Jiajie, Shuai, Yao, Luo, Wenbo, Zhou, Min, Yu, Wenjie, Ou, Xin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6911103/
https://www.ncbi.nlm.nih.gov/pubmed/31836794
http://dx.doi.org/10.1038/s41598-019-55628-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6911103/
https://www.ncbi.nlm.nih.gov/pubmed/31836794
http://dx.doi.org/10.1038/s41598-019-55628-3

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