F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a...

Descripción completa

Detalles Bibliográficos
Autores principales: Yun, Seunghyun, Oh, Jeongmin, Kang, Seokjung, Kim, Yoon, Kim, Jang Hyun, Kim, Garam, Kim, Sangwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915369/
https://www.ncbi.nlm.nih.gov/pubmed/31717540
http://dx.doi.org/10.3390/mi10110760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915369/
https://www.ncbi.nlm.nih.gov/pubmed/31717540
http://dx.doi.org/10.3390/mi10110760

Ejemplares similares