F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a...

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Detalles Bibliográficos
Autores principales: Yun, Seunghyun, Oh, Jeongmin, Kang, Seokjung, Kim, Yoon, Kim, Jang Hyun, Kim, Garam, Kim, Sangwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915369/
https://www.ncbi.nlm.nih.gov/pubmed/31717540
http://dx.doi.org/10.3390/mi10110760
Descripción
Sumario:In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (V(ON)) maintaining high on-state current (I(ON)) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower V(ON) than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher I(ON) and 7 mV/dec smaller average SS with the same V(ON) as that for L-shaped TFET.

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