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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a...

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Detalles Bibliográficos
Autores principales:	Yun, Seunghyun, Oh, Jeongmin, Kang, Seokjung, Kim, Yoon, Kim, Jang Hyun, Kim, Garam, Kim, Sangwan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915369/ https://www.ncbi.nlm.nih.gov/pubmed/31717540 http://dx.doi.org/10.3390/mi10110760

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