Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN ga...

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Detalles Bibliográficos
Autores principales: Keum, Dongmin, Kim, Hyungtak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915387/
https://www.ncbi.nlm.nih.gov/pubmed/31717725
http://dx.doi.org/10.3390/mi10110723

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915387/
https://www.ncbi.nlm.nih.gov/pubmed/31717725
http://dx.doi.org/10.3390/mi10110723

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