Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive...

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Detalles Bibliográficos
Autores principales: Jang, Won Douk, Yoon, Young Jun, Cho, Min Su, Jung, Jun Hyeok, Lee, Sang Ho, Jang, Jaewon, Bae, Jin-Hyuk, Kang, In Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915479/
https://www.ncbi.nlm.nih.gov/pubmed/31683726
http://dx.doi.org/10.3390/mi10110749

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915479/
https://www.ncbi.nlm.nih.gov/pubmed/31683726
http://dx.doi.org/10.3390/mi10110749

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