Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode

In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the...

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Detalles Bibliográficos
Autores principales: Lee, Chun-Yu, Kuo, Ya-Pei, Chen, Peng-Yu, Lu, Hsieh-Hsing, Lin, Ming Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915585/
https://www.ncbi.nlm.nih.gov/pubmed/31752259
http://dx.doi.org/10.3390/nano9111639

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915585/
https://www.ncbi.nlm.nih.gov/pubmed/31752259
http://dx.doi.org/10.3390/nano9111639

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