Study of Oxidation and Polarization-Dependent Optical Properties of Environmentally Stable Layered GaTe Using a Novel Passivation Approach

Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, optoelectronics, and quantum photonics. However, oxida...

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Detalles Bibliográficos
Autores principales: Kotha, Mounika, Murray, Thomas, Tuschel, David, Gallis, Spyros
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915591/
https://www.ncbi.nlm.nih.gov/pubmed/31652827
http://dx.doi.org/10.3390/nano9111510

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915591/
https://www.ncbi.nlm.nih.gov/pubmed/31652827
http://dx.doi.org/10.3390/nano9111510

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