Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film...

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Detalles Bibliográficos
Autores principales: Zhang, Ying, Xie, Haiting, Dong, Chengyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915614/
https://www.ncbi.nlm.nih.gov/pubmed/31739504
http://dx.doi.org/10.3390/mi10110779

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915614/
https://www.ncbi.nlm.nih.gov/pubmed/31739504
http://dx.doi.org/10.3390/mi10110779

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