Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar...

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Detalles Bibliográficos
Autores principales: Yu, Junsu, Kim, Sihyun, Ryu, Donghyun, Lee, Kitae, Kim, Changha, Lee, Jong-Ho, Kim, Sangwan, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915659/
https://www.ncbi.nlm.nih.gov/pubmed/31684162
http://dx.doi.org/10.3390/mi10110753

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915659/
https://www.ncbi.nlm.nih.gov/pubmed/31684162
http://dx.doi.org/10.3390/mi10110753

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