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Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915659/ https://www.ncbi.nlm.nih.gov/pubmed/31684162 http://dx.doi.org/10.3390/mi10110753 |
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author | Yu, Junsu Kim, Sihyun Ryu, Donghyun Lee, Kitae Kim, Changha Lee, Jong-Ho Kim, Sangwan Park, Byung-Gook |
author_facet | Yu, Junsu Kim, Sihyun Ryu, Donghyun Lee, Kitae Kim, Changha Lee, Jong-Ho Kim, Sangwan Park, Byung-Gook |
author_sort | Yu, Junsu |
collection | PubMed |
description | L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET. |
format | Online Article Text |
id | pubmed-6915659 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-69156592019-12-24 Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor Yu, Junsu Kim, Sihyun Ryu, Donghyun Lee, Kitae Kim, Changha Lee, Jong-Ho Kim, Sangwan Park, Byung-Gook Micromachines (Basel) Article L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. However, L-shaped TFET is disadvantageous for low-power applications because of increased off-current due to the large ambipolar current. In this paper, a stacked gate L-shaped TFET is proposed for suppression of ambipolar current. Stacked gates can be easily implemented using the structural features of L-shaped TFET, and on- and off-current can be controlled separately by using different gates located near the source and the drain, respectively. As a result, the suppression of ambipolarity is observed with respect to work function difference between two gates by simulation of the band-to-band tunneling generation. Furthermore, the proposed device suppresses ambipolar current better than existing ambipolar current suppression methods. In particular, low drain resistance is achieved as there is no need to reduce drain doping, which leads to a 7% enhanced on-current. Finally, we present the fabrication method for a stacked gate L-shaped TFET. MDPI 2019-11-03 /pmc/articles/PMC6915659/ /pubmed/31684162 http://dx.doi.org/10.3390/mi10110753 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yu, Junsu Kim, Sihyun Ryu, Donghyun Lee, Kitae Kim, Changha Lee, Jong-Ho Kim, Sangwan Park, Byung-Gook Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title | Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title_full | Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title_fullStr | Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title_full_unstemmed | Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title_short | Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor |
title_sort | investigation on ambipolar current suppression using a stacked gate in an l-shaped tunnel field-effect transistor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915659/ https://www.ncbi.nlm.nih.gov/pubmed/31684162 http://dx.doi.org/10.3390/mi10110753 |
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