Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology

Room-temperature highly sensitive microbolometers are becoming very attractive in infrared (IR) sensing with the increase in demand for the internet of things (IOT), night vision, and medical imaging. Different techniques, such as building extremely small-scale devices (nanotubes, etc.) or using 2D...

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Autores principales: Göktaş, Hasan, Gökhan, Fikri Serdar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915673/
https://www.ncbi.nlm.nih.gov/pubmed/31671784
http://dx.doi.org/10.3390/mi10110733
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author Göktaş, Hasan
Gökhan, Fikri Serdar
author_facet Göktaş, Hasan
Gökhan, Fikri Serdar
author_sort Göktaş, Hasan
collection PubMed
description Room-temperature highly sensitive microbolometers are becoming very attractive in infrared (IR) sensing with the increase in demand for the internet of things (IOT), night vision, and medical imaging. Different techniques, such as building extremely small-scale devices (nanotubes, etc.) or using 2D materials, showed promising results in terms of high sensitivity with the cost of challenges in fabrication and low-noise readout circuit. Here, we propose a new and simple technique on the application of joule heating on a clamped–clamped beam without adding any complexity. It provides much better uniformity in temperature distribution in comparison to conventional joule heating, and this results in higher thermal stresses on fixed ends. This consequently brings around 60.5× improvement in the overall temperature sensitivity according to both theory and COMSOL (multiphysics solver). The sensitivity increased with the increase in the stiffness constant, and it was calculated as 134 N/m for a device with a 60.5× improvement. A considerable amount of decrease in the operation temperature (36× below 383 K and 47× below 428 K) was achieved via a new technique. That’s why the proposed solution can be used either to build highly reliable long-term devices or to increase the thermal sensitivity.
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spelling pubmed-69156732019-12-24 Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology Göktaş, Hasan Gökhan, Fikri Serdar Micromachines (Basel) Article Room-temperature highly sensitive microbolometers are becoming very attractive in infrared (IR) sensing with the increase in demand for the internet of things (IOT), night vision, and medical imaging. Different techniques, such as building extremely small-scale devices (nanotubes, etc.) or using 2D materials, showed promising results in terms of high sensitivity with the cost of challenges in fabrication and low-noise readout circuit. Here, we propose a new and simple technique on the application of joule heating on a clamped–clamped beam without adding any complexity. It provides much better uniformity in temperature distribution in comparison to conventional joule heating, and this results in higher thermal stresses on fixed ends. This consequently brings around 60.5× improvement in the overall temperature sensitivity according to both theory and COMSOL (multiphysics solver). The sensitivity increased with the increase in the stiffness constant, and it was calculated as 134 N/m for a device with a 60.5× improvement. A considerable amount of decrease in the operation temperature (36× below 383 K and 47× below 428 K) was achieved via a new technique. That’s why the proposed solution can be used either to build highly reliable long-term devices or to increase the thermal sensitivity. MDPI 2019-10-29 /pmc/articles/PMC6915673/ /pubmed/31671784 http://dx.doi.org/10.3390/mi10110733 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Göktaş, Hasan
Gökhan, Fikri Serdar
Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title_full Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title_fullStr Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title_full_unstemmed Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title_short Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
title_sort analysis and simulation of forcing the limits of thermal sensing for microbolometers in cmos–mems technology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915673/
https://www.ncbi.nlm.nih.gov/pubmed/31671784
http://dx.doi.org/10.3390/mi10110733
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