Cargando…
Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study
The Ge-Bi-Se thin films of varied compositions (Ge content 0–32.1 at. %, Bi content 0–45.7 at. %, Se content 54.3–67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser...
Autores principales: | Mawale, Ravi, Mandal, Govinda, Bouška, Marek, Gutwirth, Jan, Bora, Pankaj Lochan, Nazabal, Virginie, Havel, Josef, Němec, Petr |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6915747/ https://www.ncbi.nlm.nih.gov/pubmed/31844112 http://dx.doi.org/10.1038/s41598-019-55773-9 |
Ejemplares similares
-
Mass spectrometric investigation of amorphous Ga-Sb-Se thin films
por: Mawale, Ravi, et al.
Publicado: (2019) -
Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser
Deposition
por: Prokeš, Lubomír, et al.
Publicado: (2021) -
Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films
por: Bouška, M., et al.
Publicado: (2016) -
Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films
por: Gutwirth, Jan, et al.
Publicado: (2022) -
Comparative study of Er(3+)-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition
por: Normani, Simone, et al.
Publicado: (2020)