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Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices

Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. W...

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Detalles Bibliográficos
Autores principales: Saxena, Nishant, Persch, Christoph, Wuttig, Matthias, Manivannan, Anbarasu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917803/
https://www.ncbi.nlm.nih.gov/pubmed/31848416
http://dx.doi.org/10.1038/s41598-019-55874-5