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Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices

Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. W...

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Autores principales: Saxena, Nishant, Persch, Christoph, Wuttig, Matthias, Manivannan, Anbarasu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917803/
https://www.ncbi.nlm.nih.gov/pubmed/31848416
http://dx.doi.org/10.1038/s41598-019-55874-5
_version_ 1783480476531425280
author Saxena, Nishant
Persch, Christoph
Wuttig, Matthias
Manivannan, Anbarasu
author_facet Saxena, Nishant
Persch, Christoph
Wuttig, Matthias
Manivannan, Anbarasu
author_sort Saxena, Nishant
collection PubMed
description Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In(3)SbTe(2) (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.
format Online
Article
Text
id pubmed-6917803
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-69178032019-12-19 Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices Saxena, Nishant Persch, Christoph Wuttig, Matthias Manivannan, Anbarasu Sci Rep Article Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In(3)SbTe(2) (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications. Nature Publishing Group UK 2019-12-17 /pmc/articles/PMC6917803/ /pubmed/31848416 http://dx.doi.org/10.1038/s41598-019-55874-5 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Saxena, Nishant
Persch, Christoph
Wuttig, Matthias
Manivannan, Anbarasu
Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title_full Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title_fullStr Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title_full_unstemmed Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title_short Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
title_sort exploring ultrafast threshold switching in in(3)sbte(2) phase change memory devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917803/
https://www.ncbi.nlm.nih.gov/pubmed/31848416
http://dx.doi.org/10.1038/s41598-019-55874-5
work_keys_str_mv AT saxenanishant exploringultrafastthresholdswitchinginin3sbte2phasechangememorydevices
AT perschchristoph exploringultrafastthresholdswitchinginin3sbte2phasechangememorydevices
AT wuttigmatthias exploringultrafastthresholdswitchinginin3sbte2phasechangememorydevices
AT manivannananbarasu exploringultrafastthresholdswitchinginin3sbte2phasechangememorydevices