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Exploring ultrafast threshold switching in In(3)SbTe(2) phase change memory devices
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. W...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917803/ https://www.ncbi.nlm.nih.gov/pubmed/31848416 http://dx.doi.org/10.1038/s41598-019-55874-5 |