Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density...

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Detalles Bibliográficos
Autores principales: Wu, Min‐Ci, Ting, Yi‐Hsin, Chen, Jui‐Yuan, Wu, Wen‐Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6918122/
https://www.ncbi.nlm.nih.gov/pubmed/31890465
http://dx.doi.org/10.1002/advs.201902363

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6918122/
https://www.ncbi.nlm.nih.gov/pubmed/31890465
http://dx.doi.org/10.1002/advs.201902363

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