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Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density...

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Autores principales: Wu, Min‐Ci, Ting, Yi‐Hsin, Chen, Jui‐Yuan, Wu, Wen‐Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6918122/
https://www.ncbi.nlm.nih.gov/pubmed/31890465
http://dx.doi.org/10.1002/advs.201902363
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author Wu, Min‐Ci
Ting, Yi‐Hsin
Chen, Jui‐Yuan
Wu, Wen‐Wei
author_facet Wu, Min‐Ci
Ting, Yi‐Hsin
Chen, Jui‐Yuan
Wu, Wen‐Wei
author_sort Wu, Min‐Ci
collection PubMed
description The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D‐VRRAM arrays are designed. Two‐layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross‐point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications.
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spelling pubmed-69181222019-12-30 Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays Wu, Min‐Ci Ting, Yi‐Hsin Chen, Jui‐Yuan Wu, Wen‐Wei Adv Sci (Weinh) Communications The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D‐VRRAM arrays are designed. Two‐layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross‐point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications. John Wiley and Sons Inc. 2019-10-07 /pmc/articles/PMC6918122/ /pubmed/31890465 http://dx.doi.org/10.1002/advs.201902363 Text en © 2019 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Wu, Min‐Ci
Ting, Yi‐Hsin
Chen, Jui‐Yuan
Wu, Wen‐Wei
Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title_full Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title_fullStr Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title_full_unstemmed Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title_short Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
title_sort low power consumption nanofilamentary ecm and vcm cells in a single sidewall of high‐density vrram arrays
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6918122/
https://www.ncbi.nlm.nih.gov/pubmed/31890465
http://dx.doi.org/10.1002/advs.201902363
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