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Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays
The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6918122/ https://www.ncbi.nlm.nih.gov/pubmed/31890465 http://dx.doi.org/10.1002/advs.201902363 |