Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the pot...

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Detalles Bibliográficos
Autores principales: Iwata-Harms, Jodi M., Jan, Guenole, Serrano-Guisan, Santiago, Thomas, Luc, Liu, Huanlong, Zhu, Jian, Lee, Yuan-Jen, Le, Son, Tong, Ru-Ying, Patel, Sahil, Sundar, Vignesh, Shen, Dongna, Yang, Yi, He, Renren, Haq, Jesmin, Teng, Zhongjian, Lam, Vinh, Liu, Paul, Wang, Yu-Jen, Zhong, Tom, Fukuzawa, Hideaki, Wang, Po-Kang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6923472/
https://www.ncbi.nlm.nih.gov/pubmed/31857596
http://dx.doi.org/10.1038/s41598-019-54466-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6923472/
https://www.ncbi.nlm.nih.gov/pubmed/31857596
http://dx.doi.org/10.1038/s41598-019-54466-7

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