Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)

Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S....

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Detalles Bibliográficos
Autores principales: Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/
https://www.ncbi.nlm.nih.gov/pubmed/31783497
http://dx.doi.org/10.3390/ma12233917

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/
https://www.ncbi.nlm.nih.gov/pubmed/31783497
http://dx.doi.org/10.3390/ma12233917

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